unisonic technologies co., ltd 2sd965/a npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r209-007,b low voltage high current transistor features * collector current up to 5a * utc 2sd965 : collector-emitter voltage up to 20 v * utc 2sD965A : collector-emitter voltage up to 30 v applications * audio amplifier * flash unit of camera * switching circuit to-92 1 to-252 1 1 sot-89 *pb-free plating product number: 2sd965l/2sD965Al ordering information order number pin assignment normal lead free plating package 1 2 3 packing 2sd965-x-ab3-r 2sd965l-x-ab3-r sot-89 b c e tape reel 2sd965-x-t92-b 2sd965l-x-t 92-b to-92 e c b tape box 2sd965-x-t92-k 2sd965l-x-t92-k to-92 e c b bulk 2sd965-x-tn3-r 2sd965l-x-tn3- r to-252 b c e tape reel 2sd965-x-tn3-t 2sd965l-x-tn3-t to-252 b c e tube 2sD965A-x-ab3-r 2sD965Al-x-ab3-r sot-89 b c e tape reel 2sD965A-x-t92-b 2sD965Al-x-t92-b to-92 e c b tape box 2sD965A-x-t92-k 2sD965Al-x-t92-k to-92 e c b bulk 2sD965A-x-tn3-r 2sD965Al-x-tn3-r to-252 b c e tape reel 2sD965A-x-tn3-t 2sD965Al-x-tn3-t to-252 b c e tube 2sd965l-x-ab3-r (1)packing type (2)package type (3)rank (4)lead plating (1) b: tape box, k: bulk, r: tape reel, t: tube (2) ab3: sot-89, t92: to-92, tn3: to-252 (3) x: refer to classification of h fe2 (4) l: lead free plating, blank: pb/sn www.datasheet.co.kr datasheet pdf - http://www..net/
2sd965/a npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r209-007,b absolute maximum rating (ta=25 ) parameter symbol ratings unit collector-base voltage v cbo 40 v 2sd965 20 v collector-emitter voltage 2sD965A v ceo 30 v emitter-base voltage v ebo 7 v sot-89 500 mw to-92 750 mw collector dissipation to-252 p c 1 w collector current i c 5 a junction temperature t j 150
storage temperature t stg -65 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 40 v 2sd965 20 v collector-emitter breakdown voltage 2sD965A bv ceo i c =1ma, i b =0 30 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 7 v collector cut-off current i cbo v cb =10v, i e =0 100 na emitter cut-off current i ebo v eb =7v, i c =0 100 na v ce =2v, i c =1ma 200 v ce =2v, i c =0.5a 230 800 dc current gain(note) h fe v ce =2v, i c =2a 150 collector-emitter saturation voltage v ce(sat) i c =3a, i b = 0.1a 1 v current gain bandwidth product f t v ce =6v, i c =50ma 150 mhz output capacitance c ob v cb =20v, i e =0, f=1mhz 50 pf classification of h fe2 rank q r s range 230-380 340-600 560-800 www.datasheet.co.kr datasheet pdf - http://www..net/
2sd965/a npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r209-007,b typical characteristics static characteristics collector-emitter voltage ( v) collector current, i c (a) 0 0.4 0.8 1.2 1.6 2.0 0 1. 0 1. 5 2. 0 2. 5 3. 0 dc current gain collector current, i c (ma) dc current gain, h fe v ce =2v 10 0 10 1 10 2 10 3 10 -1 10 1 10 2 10 3 10 4 i b =3.0ma i b =2.5ma i b =2.0ma i b =1.0ma i b =1.5ma i b =0.5ma base-emitter on voltage collector current, i c (ma) saturation voltage (mv) saturation voltage i c =30i b ta=75 -25 25 v ce =2v 0 1 2 3 4 5 6 00.81.21.62.0 base to emitter voltage, v be (v) 0. 4 collector current, i c (a) 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 v be(sat) v ce(sat) current gain-bandwidth product collector output capacitance collector current, i c (ma) current gain-bandwidt h product, f t (mhz) v ce =6v collector-base voltage (v) capacitance, c ob (pf) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 f=1mhz i e =0 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 www.datasheet.co.kr datasheet pdf - http://www..net/
2sd965/a npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r209-007,b typical characteristics safe operation area collector-emitter voltage, v ce (v) collector current, i c (a) single pulse ta =25 t=10ms t=1s icp i c 0.01 0.1 1 10 100 0.1 1 10 100 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.datasheet.co.kr datasheet pdf - http://www..net/
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